Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-03-02
1995-12-05
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257344, 257377, 257408, 257412, 437 43, 437162, 437203, 437233, H01L 2978, H01L 21265
Patent
active
054731844
ABSTRACT:
A semiconductor device comprises a semiconductor substrate of a first conductivity type and a pair of spaced diffused layers of a second conductivity type different from the first conductivity type formed in surface portions of the semiconductor substrate. A gate electrode is formed on a channel region between the pair of diffused layers in the semiconductor substrate with an intermediate gate oxide layer disposed therebetween, and then a silicon dioxide film is formed to cover an upper surface and side surfaces of the gate electrode and surface portions of the substrate in which the pair of diffused layers is formed. A side wall made of polycrystalline silicon is formed to cover the silicon dioxide film on each of the side surfaces of the gate electrode and an interlayer insulating film is formed to cover the silicon dioxide film, the side wall and the substrate. Then, a contact hole is formed through the interlayer insulating film to reach one of the pair of diffused layers, wherein a part of the side wall is exposed within the contact hole and a surface of the exposed part of the side wall is oxidized.
REFERENCES:
patent: 5290720 (1994-03-01), Chen
Nippon Steel Corporation
Wojciechowicz Edward
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