Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-27
2009-10-06
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27071, C438S210000, C438S643000
Reexamination Certificate
active
07598557
ABSTRACT:
The semiconductor device comprises a first insulation film26formed over a semiconductor substrate10,first conductor plug32buried in a first contact hole28aformed down to a source/drain diffused layer22,a capacitor44formed over the first insulation film26,a first hydrogen diffusion preventing film48formed over the first insulation film26,covering the capacitor44,a second insulation film50formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film52formed over the first hydrogen diffusion preventing film26and having the surface planarized, a second hydrogen diffusion preventing film52formed over the second insulation film50,second conductor plug62buried in a second contact hole56formed down to the lower electrode38or the upper electrode42of the capacitor44,a third conductor plug62buried in a third contact hole58formed down to the first conductor plug32,and an interconnection64connected to the second conductor plug62or the third conductor plug62.
REFERENCES:
patent: 6570203 (2003-05-01), Hikosaka et al.
patent: 6740531 (2004-05-01), Cho et al.
patent: 7064366 (2006-06-01), Kang et al.
patent: 7190015 (2007-03-01), Natori et al.
patent: 2003/0089954 (2003-05-01), Sashida
patent: 2000-164817 (2000-06-01), None
patent: 3114710 (2000-09-01), None
patent: 2002-176149 (2002-06-01), None
patent: 2003-100994 (2003-04-01), None
patent: 2003-152165 (2003-05-01), None
patent: 2003-197878 (2003-07-01), None
patent: 2003-229542 (2003-08-01), None
patent: 2003-0039991 (2003-05-01), None
Korean Official Communication dated Apr. 20, 2006.
Kikuchi Hideaki
Nagai Kouichi
Ozaki Yasutaka
Sashida Naoya
Fujitsu Microelectronics Limited
Nguyen Khiem D
Westerman, Hattori, Daniels & Adrian , LLP.
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