Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2011-04-05
2011-04-05
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S050000, C257S781000, C257SE23169, C257SE21143, C257SE21524, C345S084000, C345S085000, C345S100000, C345S204000, C327S142000, C327S333000
Reexamination Certificate
active
07919775
ABSTRACT:
A method of operating a semiconductor device, a semiconductor device and a digital micromirror system are presented. In an embodiment, the semiconductor device comprises a grounded substrate, a memory array, and a reset driver. The memory array may be isolated from the grounded substrate with a buried layer. The set of voltages of the memory array may be shifted with respect to a reset voltage. The reset driver may drive the reset voltage and the reset driver may have at least one extended drain transistor in the grounded substrate.
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Hall James N.
Huffman James D.
Brady III Wade James
Brill Charles A.
Green Telly D
Smith Zandra
Telecky , Jr. Frederick J.
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