Semiconductor device and method

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

Reexamination Certificate

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C257S620000, C257SE29022

Reexamination Certificate

active

07988794

ABSTRACT:
A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and second opposing sides with an active area formed on a first portion of the first side having a topology extending a first distance above the first side. A support member is attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. In some exemplary embodiments, the support member is formed by applying adhesive to the second portion. The wafer is then spun to adjust the second distance.

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