Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Reexamination Certificate
2011-08-02
2011-08-02
Fourson, George (Department: 2823)
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
C257S620000, C257SE29022
Reexamination Certificate
active
07988794
ABSTRACT:
A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and second opposing sides with an active area formed on a first portion of the first side having a topology extending a first distance above the first side. A support member is attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. In some exemplary embodiments, the support member is formed by applying adhesive to the second portion. The wafer is then spun to adjust the second distance.
REFERENCES:
patent: 5885856 (1999-03-01), Gilbert et al.
patent: 6140178 (2000-10-01), Tseng
patent: 6396158 (2002-05-01), Travis et al.
patent: 6561883 (2003-05-01), Kondo et al.
patent: 6593226 (2003-07-01), Travis et al.
patent: 6786809 (2004-09-01), Held
patent: 6872598 (2005-03-01), Liu
patent: 6905967 (2005-06-01), Tian et al.
patent: 6930023 (2005-08-01), Okada et al.
patent: 7018268 (2006-03-01), Kassir et al.
patent: 7054052 (2006-05-01), Niklaus et al.
patent: 7078771 (2006-07-01), Kim
patent: 7195988 (2007-03-01), Nemoto et al.
patent: 7288489 (2007-10-01), Dolechek et al.
patent: 2003/0219975 (2003-11-01), Koutny et al.
patent: 2005/0064681 (2005-03-01), Wood et al.
patent: 2005/0221277 (2005-10-01), Kawanishi
patent: 2005/0241929 (2005-11-01), Auger et al.
patent: 2005/0264176 (2005-12-01), Onozuka et al.
patent: 2007/0278605 (2007-12-01), Shibayama
patent: 2008/0087636 (2008-04-01), Wu et al.
patent: 1361602 (2003-04-01), None
Kroninger Werner
Ossowski Lukas
Schneider Ludwig
Schwaiger Josef
Dicke, Billig & Czaja P.L.L.C.
Fourson George
Infineon - Technologies AG
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