Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-22
2009-08-18
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000, C438S643000, C438S648000, C438S718000, C257SE21026, C257SE21311, C257SE21314, C257SE21582, C257SE21589
Reexamination Certificate
active
07575998
ABSTRACT:
Embodiments relate to a method for forming a wiring in a semiconductor device, that may include laminating a conductive layer for wiring formation on a semiconductor substrate, forming a photoresist layer pattern on the conductive layer, performing primary dry etching for the conductive layer after employing the photoresist layer pattern as a mask, thereby forming a wiring pattern, partially removing the photoresist layer pattern through secondary dry etching, thereby forming a passivation layer on a surface of the wiring pattern, performing tertiary dry etching for the wiring pattern and a diffusion barrier after employing the photoresist layer pattern as a mask, thereby forming a metal wiring, and removing the photoresist layer pattern.
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Dongbu Hi-Tek Co., Ltd.
Lebentritt Michael S
Sherr & Vaughn, PLLC
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