Semiconductor device and memory

Details Semiconductor device and memory Semiconductor device and memory

2009-12-18

2011-10-11

Nguyen, Viet (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S185180, C257S288000

Reexamination Certificate

active

08036027

ABSTRACT:
A memory applicable to an embedded memory is provided. The memory includes a substrate, a gate, a charge-trapping gate dielectric layer, a source, and a drain. The gate is disposed above the substrate. The charge-trapping gate dielectric layer is disposed between the gate and the substrate. The source and the drain are disposed in the substrate beside the gate respectively.

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Chinese Examination Report of Taiwan Patent Application No. 096102275, dated Mar. 29, 2010.

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