Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-21
2006-11-21
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000
Reexamination Certificate
active
07138676
ABSTRACT:
A semiconductor device in which a plurality of rows are set along an X direction and a plurality of columns are set along a Y direction orthogonal to the X direction, comprises a first element region including a first trench disposed in a first column at one end thereof and a second trench disposed in a second column parallel to the first column at the other end thereof; a second element region including a third trench disposed at a position closer to the second trench than the first trench in the first column at one end thereof and a fourth trench disposed in the second column at the other end thereof; and a third element region including a fifth trench disposed at a position closer to the fourth trench than the third trench in the first column at one end thereof and a sixth trench disposed in the second column at the other end thereof.
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