Semiconductor device and manufacturing process thereof

Details Semiconductor device and manufacturing process thereof Semiconductor device and manufacturing process thereof

1996-11-07

1998-02-17

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257395, 257510, 257347, 257 57, 257 66, H01L 2712

Patent

active

057194262

ABSTRACT:
A semiconductor integrated circuit is formed by MESA isolation of a thin film silicon layer, in which transistor characteristics are free from influence depending on pattern density of transistor forming regions. The thin film silicon layer on an insulating substrate is isolated by MESA isolation, and element forming regions are formed. In the middle part of a large distance between the element forming regions, a LOCOS oxide film is thickly formed, and an oxide film is buried between the LOCOS oxide film and the element forming regions contiguously at the same surface level so that there is no step-like level difference therebetween.

REFERENCES:
patent: 5343051 (1994-08-01), Yamaguchi et al.
patent: 5406102 (1995-04-01), Oashi
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5619053 (1997-04-01), Iwamatsu et al.
"Method to Generate Ulta-Thin, Uniform Silicon-on-Insulator Films for Microelectronic Applications," IBM Technical Disclosure Bulletin, vol.37, No. 04B, Apr. 1994, p.699.

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