Semiconductor device and manufacturing process therefore

Details Semiconductor device and manufacturing process therefore Semiconductor device and manufacturing process therefore

2004-12-03

2008-08-05

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S283000, C438S655000, C438S682000

Reexamination Certificate

active

07407880

ABSTRACT:
A semiconductor device which can prevent a leak current between a silicide layer on a polysilicon and another part, as well as a manufacturing process therefor. The semiconductor device includes neighboring n- and p-type polysilicons; and a silicide layer thereon extending from the n-type polysilicon to the p-type polysilicon. The silicide layer is formed over the upper surfaces of the n- and p-type polysilicons except the periphery thereof.

REFERENCES:
patent: 5468669 (1995-11-01), Lee et al.
patent: 5550079 (1996-08-01), Lin
patent: 6214656 (2001-04-01), Liaw
patent: 6277719 (2001-08-01), Chern et al.
patent: 6593631 (2003-07-01), Lee et al.
patent: 6670680 (2003-12-01), Nohsoh et al.
patent: 6853039 (2005-02-01), Tanaka
patent: 2000-332210 (2000-11-01), None
patent: 2002-217310 (2002-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing process therefore does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing process therefore, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing process therefore will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3997666