Semiconductor device and manufacturing process therefor

Details Semiconductor device and manufacturing process therefor Semiconductor device and manufacturing process therefor

2008-07-15

2008-07-15

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S534000, C257SE23144, C438S398000

Reexamination Certificate

active

11068965

ABSTRACT:
An objective of this invention is to provide a semiconductor device comprising a less bias-dependent capacitative element with a large capacity per a unit area, having a configuration which can be manufactured using an existing structure in a semiconductor device. There is provided a semiconductor device100, comprising a semiconductor substrate; a lower interconnection101on the semiconductor substrate, in whose upper surface a concave is formed; dielectrics102a,102b,102c,102dcovering the inner surface of the concave; and a upper interconnection104on the dielectrics102a,102b,102c,102d.

REFERENCES:
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: 6757971 (2004-07-01), Sinha
patent: H011-274428 (1999-10-01), None
patent: 2003-347416 (2003-12-01), None

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