Semiconductor device and manufacturing process therefor

Details Semiconductor device and manufacturing process therefor Semiconductor device and manufacturing process therefor

2008-07-15

2008-07-15

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S534000, C257SE23144, C438S398000

Reexamination Certificate

active

07400008

ABSTRACT:
An objective of this invention is to provide a semiconductor device comprising a less bias-dependent capacitative element with a large capacity per a unit area, having a configuration which can be manufactured using an existing structure in a semiconductor device. There is provided a semiconductor device100, comprising a semiconductor substrate; a lower interconnection101on the semiconductor substrate, in whose upper surface a concave is formed; dielectrics102a,102b,102c,102dcovering the inner surface of the concave; and a upper interconnection104on the dielectrics102a,102b,102c,102d.

REFERENCES:
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: 6757971 (2004-07-01), Sinha
patent: H011-274428 (1999-10-01), None
patent: 2003-347416 (2003-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing process therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing process therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing process therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2744534