Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S761000
Reexamination Certificate
active
07968947
ABSTRACT:
This invention provides a semiconductor device that can prevent a deviation of work function by adopting a gate electrode having a uniform composition and exhibits excellent operating characteristics by virtue of effective control of a Vth. The semiconductor device is characterized by comprising a PMOS transistor, an NMOS transistor, a gate insulating film comprising an Hf-containing insulating film with high permittivity, a line electrode comprising a silicide region (A) and a silicide region (B), one of the silicide regions (A) and (B) comprising a silicide (a) of a metal M, which serves as a diffusing species in a silicidation reaction, the other silicide region comprising a silicide layer (C) in contact with a gate insulating film, the silicide layer (C) comprising a silicide (b) of a metal M, which has a smaller atom composition ratio of the metal M than the silicide (a), and a dopant which can substantially prevent diffusion of the metal M in the silicide (b).
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Veloso A., et al., “Work function engineering by FUSI and its impact on the performance and reliability of oxynitride and Hf-silicate based MOSFETs”, IMEC, Kapeldreef '75, 3001 Leuven, Belgique,IEEE International Electron Devices Meeting 2004: ( IEDM technical digest) ( 50th annual meeting ) ( San Francisco, CA, Dec. 13-15, 2004 ) International Electron Devices Meeting, San Francisco CA , ETATS-UNIS (2004) 2004 , pp. 855-858[Note(s) : pagination multiple, ] [Document : 4 p.] (7 ref.), [Notes: “IEEE Catalog No. 04CH37602”—T.p. verso] ISBN 0-7803-8684-1.
McGinn IP Law Group PLLC
NEC Corporation
Tran Long K
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