Semiconductor device and manufacturing of the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S199000, C257SE21639, C257SE27062

Reexamination Certificate

active

07915686

ABSTRACT:
An object of the present invention is to improve the performance of a semiconductor device having a CMISFET. Each of an n channel MISFET and a p channel MISFET which form the CMISFET includes a gate insulating film composed of a silicon oxynitride film and a gate electrode including a silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film with a surface density of 1×1013to 5×1014atoms/cm2. The impurity concentration of channel regions of the n channel MISFET and the p channel MISFET is controlled to be equal to or lower than 1.2×1018/cm3.

REFERENCES:
patent: 6563182 (2003-05-01), Horikawa
patent: 6734069 (2004-05-01), Eriguchi
patent: 2003/0227062 (2003-12-01), Horiuchi et al.
patent: 2006/0043497 (2006-03-01), Kimizuka et al.
patent: 2002-280461 (2002-09-01), None
patent: 2002-314074 (2002-10-01), None
patent: 2004-134753 (2004-04-01), None
S. M. Sze, Kwok K. Ng, Physics of Semiconductor Devices, 3rd Edition, Wiley, New York, 2007 pp. 136-141.
IEDM 03-311, W. Tsai et al.
IEEE, S. Kubicek et al. pp. 251-254.
2003 Symposium on VLSI Technology Digest of Technical Papers.

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