Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S199000, C257SE21639, C257SE27062
Reexamination Certificate
active
07915686
ABSTRACT:
An object of the present invention is to improve the performance of a semiconductor device having a CMISFET. Each of an n channel MISFET and a p channel MISFET which form the CMISFET includes a gate insulating film composed of a silicon oxynitride film and a gate electrode including a silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film with a surface density of 1×1013to 5×1014atoms/cm2. The impurity concentration of channel regions of the n channel MISFET and the p channel MISFET is controlled to be equal to or lower than 1.2×1018/cm3.
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Inoue Masao
Mizutani Masaharu
Shimamoto Yasuhiro
Yugami Jiro
Antonelli, Terry Stout & Kraus, LLP.
Renesas Electronics Corporation
Vu David
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