Semiconductor device and manufacturing method thereof with a...

Details Semiconductor device and manufacturing method thereof with a... Semiconductor device and manufacturing method thereof with a...

2007-03-08

2010-10-26

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S619000, C257S622000, C257S623000, C257SE21054, C257SE29023, C438S140000, C438S319000

Reexamination Certificate

active

07821014

ABSTRACT:
A semiconductor device and a manufacturing method thereof uses a semiconductor substrate of silicon carbide. On one principal surface side of the substrate, at its central section, a layer of silicon carbide or gallium nitride as a semiconductor layer having the thickness at least necessary for breakdown voltage blocking is epitaxially grown or formed from part of the substrate. A recess is formed in the other principal surface side of substrate at a position facing the central section. A supporting section surrounds the bottom of the recess and provides the side face of the recess. The recess is formed by processing such as dry etching. The semiconductor device, even though the semiconductor substrate is made thinner for the realization of small on-resistance, can maintain the strength of the semiconductor substrate capable of reducing occurrence of a wafer cracking during the manufacturing process.

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A Partial English Translation of T. Ishida et al., “Application of High Temperature Metal Superconducting Material MgB2 to Electronics”, Kotai Butsuri (Solid State Physics), 2005, pp. 51-67, vol. 40, No. 1.

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