Semiconductor device and manufacturing method thereof with...

Details Semiconductor device and manufacturing method thereof with... Semiconductor device and manufacturing method thereof with...

2005-07-12

2010-02-16

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S384000, C257S388000, C257SE29156, C257SE29161

Reexamination Certificate

active

07663191

ABSTRACT:
In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness.

REFERENCES:
patent: 4477310 (1984-10-01), Park et al.
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5851890 (1998-12-01), Tsai et al.
patent: 6096609 (2000-08-01), Kim et al.
patent: 2007/0218606 (2007-09-01), Ozawa et al.
patent: 07-066421 (1995-03-01), None
patent: 09-074199 (1997-03-01), None
patent: 2003-224265 (2003-08-01), None

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