Semiconductor device and manufacturing method thereof to...

Details Semiconductor device and manufacturing method thereof to... Semiconductor device and manufacturing method thereof to...

2005-12-30

2008-10-07

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S624000, C438S672000, C438S673000

Reexamination Certificate

active

07432190

ABSTRACT:
A method for manufacturing a semiconductor device includes: preparing a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed; forming a first via plug and a first metal line by filling the first via hole and the first trench with a first metal; planarizing the first metal line and the first interlayer insulation layer; forming a second interlayer insulation layer on the first metal line and the first interlayer insulation layer; planarizing the second interlayer insulation layer; forming a second via hole and a second trench in the second interlayer insulation layer; forming a second via plug and a second metal line by filling the second via hole and the second trench with a second metal; and planarizing the second metal line and the second interlayer insulation layer.

REFERENCES:
patent: 6184143 (2001-02-01), Ohashi et al.
patent: 2005/0170642 (2005-08-01), Hineman et al.
patent: 10-2003-0054782 (2003-07-01), None
patent: 10-2004-0053461 (2004-06-01), None
patent: 10-2005-0069586 (2005-07-01), None
Office Action from the Korean Intellectual Property Office, dated Nov. 14, 2006, in counterpart Korean Patent Application No. 10-2005-0109010.

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