Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-25
2010-02-16
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S506000, C257S314000
Reexamination Certificate
active
07663193
ABSTRACT:
A structure is adopted for a layout of an SRAM cell which provides a local wiring3abetween a gate2aand gate2band connects an active region1aand an active region1b. This eliminates the necessity for providing a contact between the gate2aand the gate2b. Therefore, it is possible to reduce the size of a memory cell region C in a short side direction. Furthermore, a structure whereby a left end of a gate2cis retreated from the gate2aand a local wiring3bwhich connects the active region1band gate2cdisposed in a diagonal direction is adopted. This allows the gate2ato be shifted toward the center of the memory cell region C.
REFERENCES:
patent: 5610419 (1997-03-01), Tanaka
patent: 6169313 (2001-01-01), Tsutsumi et al.
patent: 6232631 (2001-05-01), Schmidt et al.
patent: 6339240 (2002-01-01), Kim
patent: 6555868 (2003-04-01), Shimizu et al.
patent: 6720628 (2004-04-01), Karasawa et al.
patent: 7119389 (2006-10-01), Lee et al.
patent: 7439153 (2008-10-01), Tsuboi et al.
patent: 2002/0009846 (2002-01-01), Shimizu et al.
patent: 2002/0135027 (2002-09-01), Karasawa et al.
patent: 2004/0004257 (2004-01-01), Lee et al.
patent: 2004/0212019 (2004-10-01), Shinohara et al.
patent: 2006/0006474 (2006-01-01), Tsuboi
patent: 2006/0228860 (2006-10-01), Shinohara et al.
patent: 2007/0026603 (2007-02-01), Lee et al.
patent: 2007/0080423 (2007-04-01), Tsuboi et al.
patent: 2007/0176214 (2007-08-01), Kwon et al.
patent: 2007/0187721 (2007-08-01), Ahn et al.
patent: 2008/0042218 (2008-02-01), Igarashi et al.
patent: 2009/0026520 (2009-01-01), Tsuboi et al.
patent: 10-178110 (1998-06-01), None
patent: 2001-196472 (2001-07-01), None
patent: 2003-203993 (2003-07-01), None
patent: 2005-123243 (2005-05-01), None
patent: 2005-191454 (2005-07-01), None
Igarashi Motoshige
Tsuboi Nobuo
McDermott Will & Emery LLP
Menz Laura M
Renesas Technology Corp.
LandOfFree
Semiconductor device and manufacturing method thereof for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4198406