Semiconductor device and manufacturing method thereof, and...

Details Semiconductor device and manufacturing method thereof, and... Semiconductor device and manufacturing method thereof, and...

2006-03-09

2010-11-23

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S072000, C257SE21320, C438S459000, C438S155000, C438S158000

Reexamination Certificate

active

07838936

ABSTRACT:
An active matrix substrate includes a glass substrate, a driver portion formed on the glass substrate in a protruding state, a stepped portion formed along a surface of the driver portion and a surface of the glass substrate, an insulating reentrant-angle compensating film formed on a surface of the stepped portion, for compensating for at least a part of a reentrant-angle shape of the stepped portion, and a wiring layer formed along a surface of the reentrant-angle compensating film and connected to the driver portion.

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International Search Report for PCT/JP2006/304616 mailed Apr. 25, 2006.
Bruel et al., “Smart-Cut: A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding,” Jpn. J. Appl. Phys. vol. 36 (1997), pp. 1636-1641.

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