Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2007-05-22
2007-05-22
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C257SE21014
Reexamination Certificate
active
11022987
ABSTRACT:
A method for manufacturing a semiconductor device includes a step of forming a layer where a gate electrode aperture is to be formed including at least one ultraviolet resist layer on the surface where a gate electrode is to be formed, and forming a gate electrode aperture in the layer where a gate electrode aperture is to be formed; a step of forming a layer where an over-gate is to be formed in which an over-gate part of a gate electrode is to be formed, on the layer where a gate electrode aperture is to be formed; a step of reducing the width of the gate electrode aperture; and a step of forming the gate electrode in the gate electrode aperture. The method makes it possible to efficiently produce a fine gate electrode by thickening the gate electrode aperture and reducing the width of the gate electrode aperture.
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Kon Junichi
Makiyama Kozo
Nozaki Koji
Ohki Toshihiro
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