Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2011-01-04
2011-01-04
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S678000, C257S684000, C257S686000, C257S723000
Reexamination Certificate
active
07863754
ABSTRACT:
A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.
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Office Action (Application No. 200310123567.X) Dated Sep. 7, 2007.
Office Action (Application No. 92136581) Dated May 26, 2009.
Goto Yuugo
Kuwabara Hideaki
Maruyama Junya
Ohno Yumiko
Takayama Toru
Garber Charles D
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Roman Angel
Semiconductor Energy Laboratory Co,. Ltd.
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