Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S623000
Reexamination Certificate
active
08008730
ABSTRACT:
To provide a manufacturing method of a semiconductor device which can improve the reliability of the semiconductor device. A first insulating film for covering a semiconductor element formed in a semiconductor substrate is formed by a thermal CVD method or the like which has a good embedding property. A second insulating film is formed to cover the first insulating film by a plasma CVD method which has excellent humidity resistance. A plug is formed to penetrate the first insulating film and the second insulating film. A third insulating film comprised of a low-k film having a relatively low dielectric constant is formed over the second insulating film. A wiring is formed in the third insulating film by a damascene technique to be electrically coupled to the plug.
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Fukui Shoichi
Ishii Atsushi
Izumitani Junko
Morimoto Noboru
Nishioka Yasutaka
McDermott Will & Emery LLP
Renesas Electronics Corporation
Toledo Fernando L
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