Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-08-16

2011-08-16

Fahmy, Wael M (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21382, C257SE29197, C257S409000, C257S493000, C438S135000, C438S138000, C438S435000, C438S286000

Reexamination Certificate

active

07999317

ABSTRACT:
A p-type body region and an n-type buffer region are formed on an n−drift region. An n++emitter region and a p++contact region are formed on the p-type body region in contact with each other. A p++collector region is formed on the n-type buffer region. An insulating film is formed on the n−drift region, and a gate insulating film is formed on the n++emitter region, the p-type body region, and the n drift region. A gate electrode is formed on the insulating film and the gate insulating film. A p+low-resistivity region is formed in the p-type body region and surrounding the interface between the n++emitter region and between the p-type body region and the p++contact region. The p-type body region has two local maxima of an impurity concentration profile at the interface between the body region and the gate insulating film.

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