Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2010-03-17

2011-11-15

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

C257S064000, C257SE29004

Reexamination Certificate

active

08058709

ABSTRACT:
It is an object of the present invention to control the plane orientation of crystal grains obtained by using a laser beam, into a direction that can be substantially regarded as one direction in an irradiation region of the laser beam. After forming a cap film over a semiconductor film, the semiconductor film is crystallized by using a CW laser or a pulse laser having a repetition rate of greater than or equal to 10 MHz. The obtained semiconductor film has a plurality of crystal grains having a width of greater than or equal to 0.01 μm and a length of greater than or equal to 1 μm. In a surface of the obtained semiconductor film, a ratio of an orientation {211} is greater than or equal to 0.4 within the range of an angle fluctuation of ±10°.

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