Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-01-07

2011-10-04

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S585000, C438S775000, C438S786000, C257S411000, C257SE21409

Reexamination Certificate

active

08030198

ABSTRACT:
A semiconductor device includes a silicon substrate, an SiO film, and a High-K film. The SiO film is first formed on the silicon substrate and then subjected to a nitridation process to obtain an SiON film from the SiO film. The nitridation process is performed such that nitrogen concentration in the SiO film decreases from an interface with the silicon substrate below and an interface with the High-K film above, and nitrogen having predetermined concentration or more is introduced in a thickness within a range of 0.2 nm to 1 nm from the interface with the silicon substrate. The SiON film is etched up to a depth to which nitrogen of the predetermined concentration or more is introduced. The High-K film is then formed on the SiON film.

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