Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-05-21

2011-11-08

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C257S059000, C257SE29151

Reexamination Certificate

active

08053339

ABSTRACT:
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.

REFERENCES:
patent: 3108914 (1963-10-01), Hoerni
patent: 3791883 (1974-02-01), Takei
patent: 4309224 (1982-01-01), Shibata
patent: 4330363 (1982-05-01), Biegesen
patent: 4502204 (1985-03-01), Togashi
patent: 4727044 (1988-02-01), Yamazaki
patent: 4851363 (1989-07-01), Troxell
patent: 4915772 (1990-04-01), Fehlner
patent: 5075259 (1991-12-01), Moran
patent: 5108843 (1992-04-01), Ohtaka
patent: 5147826 (1992-09-01), Liu
patent: 5219786 (1993-06-01), Noguchi
patent: 5244836 (1993-09-01), Lim
patent: 5248630 (1993-09-01), Serikawa
patent: 5273920 (1993-12-01), Kwasnick
patent: 5278093 (1994-01-01), Yonehara
patent: 5289030 (1994-02-01), Yamazaki
patent: 5311041 (1994-05-01), Tominaga
patent: 5352291 (1994-10-01), Zhang
patent: 5387530 (1995-02-01), Doyle
patent: 5403772 (1995-04-01), Zhang
patent: 5426064 (1995-06-01), Zhang
patent: 5481121 (1996-01-01), Zhang
patent: 5529937 (1996-06-01), Zhang
patent: 5605846 (1997-02-01), Ohtani
patent: 5639698 (1997-06-01), Yamazaki
patent: 5684318 (1997-11-01), Ayres
patent: 5710050 (1998-01-01), Makita
patent: 5773327 (1998-06-01), Yamazaki
patent: 5843225 (1998-12-01), Takayama
patent: 5889291 (1999-03-01), Koyama
patent: 5946562 (1999-08-01), Kuo
patent: 5990998 (1999-11-01), Park
patent: 6031290 (2000-02-01), Miyazaki
patent: 6165824 (2000-12-01), Takano et al.
patent: 6168981 (2001-01-01), Battaglia
patent: 6287988 (2001-09-01), Nagamine
patent: 6346437 (2002-02-01), Maekawa
patent: 6365917 (2002-04-01), Yamazaki
patent: 6399454 (2002-06-01), Yamazaki
patent: 6436745 (2002-08-01), Gotou
patent: 6441399 (2002-08-01), Koyama
patent: 6448578 (2002-09-01), Shimada
patent: 6462802 (2002-10-01), Nishimura
patent: 6475836 (2002-11-01), Suzawa
patent: 6498369 (2002-12-01), Yamazaki
patent: 6515336 (2003-02-01), Suzawa
patent: 6534826 (2003-03-01), Yamazaki
patent: 6545359 (2003-04-01), Ohtani et al.
patent: 6576926 (2003-06-01), Yamazaki
patent: 6599791 (2003-07-01), Koyama
patent: 6617644 (2003-09-01), Yamazaki
patent: 6620661 (2003-09-01), Maekawa
patent: 6646288 (2003-11-01), Yamazaki
patent: 6744070 (2004-06-01), Shimada
patent: 6753257 (2004-06-01), Yamazaki
patent: 6784455 (2004-08-01), Maekawa
patent: 6809021 (2004-10-01), Ohtani et al.
patent: 6861670 (2005-03-01), Ohtani
patent: 6967129 (2005-11-01), Yamazaki
patent: 7015141 (2006-03-01), Yamazaki
patent: 7145173 (2006-12-01), Koyama
patent: 7420211 (2008-09-01), Ohtani et al.
patent: 2001/0030322 (2001-10-01), Yamazaki
patent: 2001/0049197 (2001-12-01), Yamazaki
patent: 2001/0052950 (2001-12-01), Yamazaki
patent: 2001/0055841 (2001-12-01), Yamazaki
patent: 2002/0006705 (2002-01-01), Suzawa
patent: 2002/0013022 (2002-01-01), Yamazaki
patent: 2002/0016028 (2002-02-01), Arao
patent: 2002/0017685 (2002-02-01), Kasahara
patent: 2002/0070382 (2002-06-01), Yamazaki
patent: 2002/0086471 (2002-07-01), Maekawa
patent: 2002/0090801 (2002-07-01), Maekawa
patent: 2002/0106861 (2002-08-01), Yamazaki
patent: 2002/0110941 (2002-08-01), Yamazaki
patent: 2002/0163035 (2002-11-01), Yamazaki
patent: 2002/0164843 (2002-11-01), Yamazaki
patent: 2002/0190334 (2002-12-01), Shimada
patent: 2003/0052336 (2003-03-01), Yamazaki
patent: 2003/0060057 (2003-03-01), Raaijmakers
patent: 2003/0129791 (2003-07-01), Yamazaki
patent: 2003/0197179 (2003-10-01), Yamazaki
patent: 2004/0051142 (2004-03-01), Yamazaki
patent: 2004/0147065 (2004-07-01), Kitakado
patent: 2004/0214439 (2004-10-01), Yamazaki
patent: 2005/0040401 (2005-02-01), Yamazaki
patent: 2005/0098894 (2005-05-01), Ohtani
patent: 2005/0139831 (2005-06-01), Koyama
patent: 2006/0081931 (2006-04-01), Yamazaki
patent: 2006/0121736 (2006-06-01), Yamazaki
patent: 2007/0200113 (2007-08-01), Yamazaki
patent: 1276622 (2000-12-01), None
patent: 0 082 012 (1983-06-01), None
patent: 0 629 003 (1994-12-01), None
patent: 1 001 467 (2000-05-01), None
patent: 1 006 589 (2000-06-01), None
patent: 1031 873 (2000-08-01), None
patent: 1 041 622 (2000-10-01), None
patent: 1 041 641 (2000-10-01), None
patent: 1 045 447 (2000-10-01), None
patent: 1 049 167 (2000-11-01), None
patent: 56-024925 (1981-03-01), None
patent: 60-105216 (1985-06-01), None
patent: 60105216 (1985-06-01), None
patent: 04-011722 (1992-01-01), None
patent: 06-013610 (1994-01-01), None
patent: 06-148685 (1994-05-01), None
patent: 06-267978 (1994-09-01), None
patent: 06-338615 (1994-12-01), None
patent: 07-235680 (1995-09-01), None
patent: 07-297407 (1995-11-01), None
patent: 08-274336 (1996-10-01), None
patent: 10-048651 (1998-02-01), None
patent: 10048651 (1998-02-01), None
patent: 11-271792 (1999-10-01), None
patent: 2000-36465 (2000-02-01), None
patent: 2000-81632 (2000-03-01), None
patent: 2000-216396 (2000-08-01), None
patent: 2000-228527 (2000-08-01), None
patent: 2000-252473 (2000-09-01), None
patent: 2000-349301 (2000-12-01), None
patent: 2001-013525 (2001-01-01), None
B.C. Ahn et al.; “Batch-Processing of High-Performance Amorphous-Silicon/Silicon-Nitride Thin-Film Transistors”IEEE Display Research Conference, pp. 85-88 (1991).
Australian Patent Office Search Report (Application No. SG 200200805-0), dated Feb. 16, 2004, 8 pages.
Caune S. et al.; “Combined CW Laser and Furnace Annealing of Amorphous Si and Ge in Contact with some Metals”;Applied Surface Science, vol. 36, pp. 597-604 (1989).
First Office Action (Patent Application No. 200410092710.8) dated Aug. 11, 2006, Patent Office of the People's Republic of China (6 pages).
M. Fuse et al.; “Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6—Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization”;Solid State Phenomena, vols. 37-38; pp. 565-570 (1994).
Sorab Ghandhi; “Thermal Oxidation of Gallium Arsenide”;VLSI Fabrication Principles—Silicon and Gallium Arsenide; 2ndEdition, pp. 484, 485, 533-535 (1994).
L. Hultman et al.; “Crystallization of Amorphous Silicon During Thin-film Gold Reaction”;J. Appl. Phys., vol. 62, No. 9; pp. 3647-3655 (Nov. 1987).
Yunosuke Kawazu et al.; “Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation”;Japanese Journal of Applied Physics, vol. 29, No. 12; pp. 2698-2704 (1990).
Kenji Sera et al.; “High-Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film”;IEEE Transactions on Electron Device, vol. 36, No. 12; pp. 2868-2872 (Dec. 1989).
Rafael Reif et al.; “Plasma-Enhanced Chemical Vapor Deposition”;Thin Film Processes II; pp. 537-541; (1991).
Search Report and Written Opinion (Singapore Application No. 200601869-1) Dated Feb. 20, 2008 (22 pages).
S.M. Sze;VLSI Technology; 2ndEdition, pp. 85-86, 266-267 (1988).
Hongyong Zhang et al.; “KrF Excimer Laser Annealed TFT with Very High Field-Effect Mobility of 329 cm2/v • s”;IEEE Electron Device Letters; vol. 13, No. 5; pp. 297-299 (May 1992).
Office Action (Chinese Patent Application No. 200410092710.8) mailed May 22, 2009 with English translation (10 pages).

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4277458