Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-06-20

2011-12-27

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S795000

Reexamination Certificate

active

08084338

ABSTRACT:
The depletion of a gate electrode (103) is suppressed in such a way that impurities are introduced into the gate electrode that is formed on a semiconductor substrate (101), with a gate insulating film (102) interposed between the gate electrode (103) and the semiconductor substrate (101), and that, by irradiating a laser beam onto the gate electrode (103), the introduced impurities are made to diffuse up to the interface between the gate electrode (103) and the gate insulating film (102).

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