Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-06-17
2010-06-29
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257S288000, C257S410000
Reexamination Certificate
active
07745318
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a semiconductor layer containing a semiconductor material having a first oxide-generating Gibbs free energy required to become an oxide; forming a first material for a gate insulator on the semiconductor layer, said first material containing an element having a second oxide-generating Gibbs free energy required to become an oxide and becoming insulative when the element is oxidized or nitrided; and annealing the first material in an atmosphere containing hydrogen atoms, or heavy hydrogen atoms, and oxygen atoms in a temperature range where the first oxide-generating Gibbs free energy is equal to or higher than the second oxide-generating Gibbs free energy.
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Coleman W. David
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
McCall-Shepard Sonya D
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