Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-08-30

2010-11-23

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S369000, C438S378000, C257SE21372

Reexamination Certificate

active

07838378

ABSTRACT:
A semiconductor device and a method for manufacturing the semiconductor device are provided. The method includes forming a collector region of a second conductivity type in a semiconductor substrate of a first conductivity type; forming a base region of the first conductivity type in the collector region, and forming an emitter region of the second conductivity type into the base region; forming an emitter in the emitter region, and forming a collector in the collector region; and forming a base in the semiconductor substrate through implanting high concentration impurity ions of the first conductive type into the semiconductor substrate.

REFERENCES:
patent: 4180827 (1979-12-01), Gates
patent: 5387553 (1995-02-01), Moksvold et al.
patent: 6563193 (2003-05-01), Kawaguchi et al.
patent: 55-001158 (1980-01-01), None
English translation of Notification of First Office Action issued on Dec. 26, 2008, from the State Intellectual Property Office of the People's Republic of China in related Chinese application No. 200710147180.6 (2 pages).
English translation of Notification of Second Office Action issued on Jun. 26, 2009, from the Patent Office of the People's Republic of China in related Chinese application No. 200710147180.6 (2 pages).

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