Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-24
2010-12-21
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S632000, C257S639000, C257SE27100
Reexamination Certificate
active
07855416
ABSTRACT:
Channel doping is an effective method for controlling Vth, but if Vthshifts to the order of −4 to −3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vthof both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B) manufactured from SiH4and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.
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Asami Taketomi
Hayakawa Masahiko
Kitakado Hidehito
Yamazaki Shunpei
Husch Blackwell LLP Welsh & Katz
Lee Eugene
Semiconductor Energy laboratory Co., Ltd.
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