Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-03-03
2010-10-19
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S149000
Reexamination Certificate
active
07816195
ABSTRACT:
A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
REFERENCES:
patent: 3814992 (1974-06-01), Kump et al.
patent: 3891468 (1975-06-01), Ito
patent: 4472871 (1984-09-01), Green
patent: 5111266 (1992-05-01), Furumura
patent: 5270224 (1993-12-01), Furumura
patent: 5292675 (1994-03-01), Codama
patent: 5396084 (1995-03-01), Matsumoto
patent: 5403762 (1995-04-01), Takemura
patent: 5485019 (1996-01-01), Yamazaki
patent: 5488000 (1996-01-01), Zhang
patent: 5518937 (1996-05-01), Furumura
patent: 5581092 (1996-12-01), Takemura
patent: 5594371 (1997-01-01), Douseki
patent: 5672541 (1997-09-01), Booske
patent: 5889315 (1999-03-01), Farrenkopf
patent: 5910672 (1999-06-01), Iwamatsu et al.
patent: 5914498 (1999-06-01), Suzawa
patent: 5936287 (1999-08-01), Gardner et al.
patent: 5981974 (1999-11-01), Makita
patent: 6011277 (2000-01-01), Yamazaki
patent: 6013930 (2000-01-01), Yamazaki
patent: 6027978 (2000-02-01), Gardner et al.
patent: 6165876 (2000-12-01), Yamazaki
patent: 6171889 (2001-01-01), Iwamatsu et al.
patent: 6218219 (2001-04-01), Yamazaki
patent: 6222235 (2001-04-01), Kojima et al.
patent: 6235563 (2001-05-01), Oka
patent: 6624476 (2003-09-01), Chan et al.
patent: 6747319 (2004-06-01), Kojima et al.
patent: 6878968 (2005-04-01), Ohnuma
patent: 7037765 (2006-05-01), Yamazaki et al.
patent: 7071041 (2006-07-01), Yamazaki et al.
patent: 7087962 (2006-08-01), Codama
patent: 7271457 (2007-09-01), Quinn
patent: 7348227 (2008-03-01), Yamazaki et al.
patent: 7564059 (2009-07-01), Yamazaki
patent: 2001/0009288 (2001-07-01), Kojima et al.
patent: 2006/0197121 (2006-09-01), Quinn
patent: 2008/0003813 (2008-01-01), Nam et al.
patent: 2008/0048241 (2008-02-01), Fujiwara et al.
patent: 2008/0213954 (2008-09-01), Yamazaki et al.
patent: 0 690 510 (1996-01-01), None
patent: 57-102067 (1982-06-01), None
patent: 59-161870 (1984-09-01), None
patent: 64-007559 (1989-01-01), None
patent: 03-020046 (1991-01-01), None
patent: 03-189626 (1991-08-01), None
patent: 04-290467 (1992-10-01), None
patent: 04-302147 (1992-10-01), None
patent: 05-082552 (1993-04-01), None
patent: 06-029834 (1994-02-01), None
patent: 08-204208 (1996-08-01), None
patent: 08-228145 (1996-09-01), None
patent: 08-274344 (1996-10-01), None
patent: 2000-208870 (2000-07-01), None
Office Action issued on Jun. 21, 2004 in U.S. Appl. No. 08/433,561.
Kusumoto Naoto
Ohnuma Hideto
Tanaka Koichiro
Yamazaki Shunpei
Fish & Richardson P.C.
Menz Laura M
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4190975