Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-02
2010-10-26
Potter, Roy K (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000
Reexamination Certificate
active
07820548
ABSTRACT:
A result of formation of an opening in a semiconductor substrate can be judged without cutting a semiconductor wafer and observing a cross-section of the cut wafer. A semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, an opening formed in the semiconductor substrate to expose the pad electrode, a wiring layer connected with the pad electrode through the opening and a monitoring opening formed in a scribe line to monitor a result of the formation of the opening.
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European Search Report mailed Jun. 15, 2009, directed to corresponding European Application No. 05021359.4; (6 pages).
Kameyama Kojiro
Suzuki Akira
Morrison & Foerster / LLP
Potter Roy K
Sanyo Electric Co,. Ltd.
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