Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-09-13

2010-06-29

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257SE27091

Reexamination Certificate

active

07745877

ABSTRACT:
A disclosed semiconductor device provided with a power MOSFET includes: a semiconductor substrate constituting a drain; a trench formed on a surface of the semiconductor substrate; a gate electrode in the trench; a body diffusion layer on a surface side of the semiconductor substrate, the body diffusion layer being positioned adjacently to the trench and formed shallower than the trench; a source diffusion layer on the surface of the semiconductor substrate; a first interlayer insulating film formed on the gate electrode; and a source electrode film made of a metallic material and formed on the semiconductor substrate. A top surface of the gate electrode and a top surface of the first interlayer insulating film are formed in a recessed manner in the trench relative to the surface of the semiconductor substrate, and a surface portion of the semiconductor substrate for the trench is formed into a tapered shape.

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 7166891 (2007-01-01), Yoshimochi
patent: 2005/0082607 (2005-04-01), Nakamura et al.
patent: 2662217 (1997-06-01), None
patent: 2001-85685 (2001-03-01), None
patent: 2002-26324 (2002-01-01), None
patent: 2002-184784 (2002-06-01), None

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