Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-15
2010-02-09
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257S342000, C257S336000, C257S408000, C257S295000, C257S296000, C257S298000
Reexamination Certificate
active
07659580
ABSTRACT:
It is an object of the present invention to obtain a transistor with a high ON current including a silicide layer without increasing the number of steps. A semiconductor device comprising the transistor includes a first region in which a thickness is increased from an edge on a channel formation region side and a second region in which a thickness is more uniform than that of the first region. The first and second region are separated by a line which is perpendicular to a horizontal line and passes through a point where a line, which passes through the edge of the silicide layer and forms an angle θ (0°<θ<45°) with the horizontal line, intersects with an interface between the silicide layer and an impurity region, and the thickness of the second region to a thickness of a silicon film is 0.6 or more.
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Chinese Office Action (Chinese Application No. 200610064386.8; CN9237) dated Jun. 5, 2009 with English translation.
Godo Hiromichi
Tokunaga Hajime
Costellia Jeffrey L.
Nguyen Joseph
Nixon & Peabody LLP
Parker Kenneth A
Semiconductor Energy Laboratory Co,. Ltd.
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