Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-08-13

2010-06-15

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S191000, C257S192000, C257S194000, C257S018000, C257S019000, C257S616000, C257SE29246

Reexamination Certificate

active

07737466

ABSTRACT:
A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer.

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