Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2004-05-24

2009-08-25

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257S711000, C257S772000, C257SE21597

Reexamination Certificate

active

07579671

ABSTRACT:
Disconnection and deterioration in step coverage of wirings are prevented to offer a semiconductor device having higher reliability. A pad electrode is formed on a surface of a silicon die. A via hole penetrating the silicon die is formed from a back surface of the silicon die to the pad electrode. A wiring layer disposed on the back surface of the silicon die runs through the via hole and is electrically connected with the pad electrode. The wiring layer covers a convex portion of silicon on the back surface of the silicon die. A solder ball is formed on the wiring layer on the convex portion of silicon.

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European Search Report dated Feb. 15, 2007, directed at counterpart EP application No. 04012464.

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