Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-12-07

2009-12-08

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257SE21159, C257SE21649, C257SE29139, C257S306000, C438S003000, C438S240000

Reexamination Certificate

active

07629636

ABSTRACT:
When adopting a stack-type capacitor structure for a ferroelectric capacitor structure (30), an interlayer insulating film (27) is formed between a lower electrode (39) (or a barrier conductive film) and a conductive plug (22) to eliminate an impact of orientation/level difference on a surface of the conductive plug (22) onto the ferroelectric film (40). Differently from a conductive film like the lower electrode (39) or the barrier conductive film, the interlayer insulating film (27) can be formed without inheriting the orientation/level difference from its lower layers by planarizing the surface thereof.

REFERENCES:
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International Search Report of PCT/JP2005/010554, date of mailing Jul. 26, 2005.
Translation of International Preliminary Report on Patentability mailed Dec. 7, 2007 of International Application No. PCT/JP2005/010554.
Chinese Office Action dated Jun. 12, 2009, issued in corresponding Chinese Application No. 200580050076.4.

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