Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-03-05
2009-06-16
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S759000, C438S800000
Reexamination Certificate
active
07547612
ABSTRACT:
It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer11is provided over a substrate, an oxide layer12is provided in contact with the metal layer11, a layer to be peeled13is formed, and the metal layer11is irradiated with a laser beam to perform oxidization and form a metal oxide layer16, a clear separation is possible with a physical means within the metal oxide layer12or at an interface between the metal oxide layer16and the oxide layer12.
REFERENCES:
patent: 4722765 (1988-02-01), Ambros et al.
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5258325 (1993-11-01), Spitzer et al.
patent: 5317236 (1994-05-01), Zavracky et al.
patent: 5341015 (1994-08-01), Kohno
patent: 5376561 (1994-12-01), Vu et al.
patent: 5397713 (1995-03-01), Hamamoto et al.
patent: 5654811 (1997-08-01), Spitzer et al.
patent: 5674304 (1997-10-01), Fukada et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5781164 (1998-07-01), Jacobsen et al.
patent: 5807440 (1998-09-01), Kubota et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5851862 (1998-12-01), Ohtani et al.
patent: 5879741 (1999-03-01), Itoh
patent: 5929961 (1999-07-01), Nishi et al.
patent: 5946551 (1999-08-01), Dimitrakopoulos et al.
patent: 5981970 (1999-11-01), Dimitrakopoulos et al.
patent: 6033974 (2000-03-01), Henley et al.
patent: 6043800 (2000-03-01), Spitzer et al.
patent: 6059913 (2000-05-01), Asmussen et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6118502 (2000-09-01), Yamazaki et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6210479 (2001-04-01), Bojarczuk et al.
patent: 6221738 (2001-04-01), Sakaguchi et al.
patent: 6261634 (2001-07-01), Itoh
patent: 6268695 (2001-07-01), Affinito
patent: 6310362 (2001-10-01), Takemura
patent: 6320640 (2001-11-01), Nishi et al.
patent: 6344660 (2002-02-01), Dimitrakopoulos et al.
patent: 6344662 (2002-02-01), Dimitrakopoulos et al.
patent: 6362866 (2002-03-01), Yamazaki et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6376333 (2002-04-01), Yamazaki et al.
patent: 6391220 (2002-05-01), Zhang et al.
patent: 6423614 (2002-07-01), Doyle
patent: 6426264 (2002-07-01), Kawai
patent: 6448152 (2002-09-01), Henley et al.
patent: 6486041 (2002-11-01), Henley et al.
patent: 6492026 (2002-12-01), Graff et al.
patent: 6521511 (2003-02-01), Inoue et al.
patent: 6544430 (2003-04-01), McCormack et al.
patent: 6572780 (2003-06-01), McCormack et al.
patent: 6632708 (2003-10-01), Sakama et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 6664169 (2003-12-01), Iwasaki et al.
patent: 6682990 (2004-01-01), Iwane et al.
patent: RE38466 (2004-03-01), Inoue et al.
patent: 6700631 (2004-03-01), Inoue et al.
patent: 6737285 (2004-05-01), Iketani et al.
patent: 6750481 (2004-06-01), Kawai
patent: 6753212 (2004-06-01), Yamazaki et al.
patent: 6774010 (2004-08-01), Chu et al.
patent: 6781152 (2004-08-01), Yamazaki
patent: 6784113 (2004-08-01), Hembree
patent: 6790747 (2004-09-01), Henley et al.
patent: 6802926 (2004-10-01), Mizutani et al.
patent: 6814832 (2004-11-01), Utsunomiya
patent: 6815240 (2004-11-01), Hayashi
patent: 6818530 (2004-11-01), Shimoda et al.
patent: 6875671 (2005-04-01), Faris
patent: 6885389 (2005-04-01), Inoue et al.
patent: 6943369 (2005-09-01), Hayashi
patent: 6946361 (2005-09-01), Takayama et al.
patent: 6974731 (2005-12-01), Yamazaki et al.
patent: 7045438 (2006-05-01), Yamazaki et al.
patent: 7094665 (2006-08-01), Shimoda et al.
patent: 7119364 (2006-10-01), Yamazaki
patent: 7122445 (2006-10-01), Takayama et al.
patent: 7189631 (2007-03-01), Yamazaki et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2003/0047280 (2003-03-01), Takayama et al.
patent: 2003/0082889 (2003-05-01), Maruyama et al.
patent: 2003/0162312 (2003-08-01), Takayama et al.
patent: 1256794 (2000-06-01), None
patent: 1312590 (2001-09-01), None
patent: 1332471 (2002-01-01), None
patent: 0 858 110 (1998-08-01), None
patent: 1 014 452 (2000-06-01), None
patent: 1 122794 (2001-08-01), None
patent: 1 351 308 (2003-10-01), None
patent: 05-347186 (1993-12-01), None
patent: 10-125929 (1998-05-01), None
patent: 10-125930 (1998-05-01), None
patent: 10-125931 (1998-05-01), None
patent: 2001-085154 (2001-03-01), None
patent: 2001-189460 (2001-07-01), None
patent: 2001-267578 (2001-09-01), None
patent: 3238223 (2001-12-01), None
patent: 2002-184959 (2002-06-01), None
patent: 2002-328624 (2002-11-01), None
patent: 2003-142666 (2003-05-01), None
patent: 478180 (2002-03-01), None
patent: 487967 (2002-05-01), None
patent: WO 92/12453 (1992-07-01), None
patent: WO 99/44242 (1999-09-01), None
T. Takayama et al.,A CPU on a Plastic Film Substrate, 2004 Symposium on VLSI Technology, Digest of Technical Papers, Jun. 15-17, 2004, pp. 230-231.
Office Action (Application No. 92130091) Dated Mar. 9, 2009.
Maruyama Junya
Ohno Yumiko
Takayama Toru
Yamazaki Shunpei
Dang Trung
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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