Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-20
1999-03-23
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 67, 257192, 257194, 257 23, H01L 2701, H01L 2978
Patent
active
058863850
ABSTRACT:
A semiconductor device comprises: a first semiconductor layer 6 having a first conductivity formed on a substrate having a surface of an insulating material 4; a source region 16a and a drain region 16b, which are formed on the first semiconductor layer so as to be separated from each other and which have a second conductivity different from the first conductivity; a channel region 6 formed on the first semiconductor layer between the source region and the drain region; a gate electrode 10 formed on the channel region a gate sidewall 14 of an insulating material formed on a side of the gate electrode; and a second semiconductor layer 18 having the first conductivity formed on at least the source region. This semiconductor device can effectively suppress the floating-body effect with a simple structure.
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patent: 4447823 (1984-05-01), Maeguchi et al.
patent: 5040037 (1991-08-01), Yamaguchi et al.
patent: 5698869 (1997-12-01), Yoshimi et al.
M. Chan et al., "Comparative Study of Fully Depleted and Body-Grounded Non Fully Depleted SOI MOSFET's for High Performance Analog and Mixed Signal Circuits", IEEE Trans. on Electron Devices, vol. 42, No. 11, Nov. 1995, pp. 1975-1981.
E. Ver Ploeg et al., "Elimination of Biopolar-Induced Breakdown in Fully-Depleted SOI MOSFETs", 1992 IEEE, pp. 13.1.1-13.1.4.
Arisumi Osamu
Nishiyama Akira
Yoshimi Makoto
Brown Peter Toby
Duong Hung Van
Kabushiki Kaisha Toshiba
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