Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-10-06

2009-08-04

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S597000, C438S624000, C438S635000, C438S658000, C438S687000, C257SE21508, C257SE21576, C257SE21582, C257SE21591, C257SE21592

Reexamination Certificate

active

07569467

ABSTRACT:
A semiconductor device has a multi-layer wiring in which resistance against migration of the semiconductor device is raised to improve the yield. Semiconductor device100includes a first interconnect (wiring)112, formed in a first interlayer insulating film106on a semiconductor substrate, not shown, a via128provided on the first interconnect (wiring)112so that the via is connected to the first interconnect (wiring)112, and a different element containing electrically conductive film114. The different element containing electrically conductive film is formed selectively on a site on the top of the first interconnect (wiring)112where the first wiring is contacted with the bottom of the via128. The different element containing electrically conductive film contains a metal of a main component of the first interconnect (wiring)112and a different element different from the metal of the main component.

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