Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-09-11

2009-11-10

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

C257S627000, C257S521000, C257S527000, C257SE31040, C257SE31049, C438S700000, C438S701000, C438S931000

Reexamination Certificate

active

07615849

ABSTRACT:
In a semiconductor device having SiC vertical trench MOSFETs, it is aimed to prevent the generation of large scattering in the channel resistance without largely increasing the average value of channel resistance. A 4H-SiC substrate having a major face thereof that is generally a {0001} face and having an off angle α. The trench is formed with the standard deviation σ in scattering of the angle formed by a trench side wall face and a substrate major face within a wafer face. By setting the designed value of the angle formed by the trench side wall face and the substrate major face at an any angle ranging from [(60 degrees)+2σ] to [(90 degrees)−tan−1(0.87×tan α)−2σ] in forming the trench in the SiC substrate, a semiconductor device in which the angle formed by the trench side wall face and the substrate major face is 60 degrees or more but not more than [(90 degrees)−tan−1(0.87×tan α)] can be obtained.

REFERENCES:
patent: 5744826 (1998-04-01), Takeuchi et al.
patent: 6057558 (2000-05-01), Yamamoto et al.
patent: 2004/0051136 (2004-03-01), Kataoka et al.
patent: 2008/0153216 (2008-06-01), Kumar et al.
patent: 09-199724 (1997-07-01), None
patent: 10-247732 (1998-09-01), None
patent: 10-308511 (1998-11-01), None
patent: 10-308512 (1998-11-01), None
patent: 11-251592 (1999-09-01), None
patent: 2002-261275 (2002-09-01), None
patent: 3-610721 (2004-10-01), None
Y. Kanzaki et al., High Channel Mobilities of MOSFETs On Highly-doped 4H-SiC (11-20) Face By Oxidation in N2O Ambient, Materials Science Forum, 2004, pp. 1429-1432, vols. 457-460, Trans Tech Publications, Switzerland.
Rohm Co.,Ltd; “http://www.rohm.co.jp
ews/sicpower-g.html,” accessed on Dec. 2004; pp. 1-3; (C) 1997-2005 Rohm.

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