Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-08-03
2000-10-31
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257304, H01L 27108, H01L 2976
Patent
active
061406759
ABSTRACT:
A semiconductor device provided with a thin film of 0.1 nm to 2 nm in thickness, having a crystal structure different from that of a conductor and a semiconductor region, between the conductor and the semiconductor region. When the semiconductor region is made of single crystal silicon and the conductor region is made of amorphous silicon or poly silicon, the oxygen surface concentration of the thin film is equal to or higher than 1.times.10.sup.15 cm.sup.-2 and equal to or lower than 4.times.10.sup.15 cm.sup.-2 in one case, that of oxygen is equal to or higher than 1.times.10.sup.15 cm.sup.-2 and equal to or lower than 2.times.10.sup.15 cm.sup.-2 and that of nitrogen is equal to or higher than 1.times.10.sup.15 cm.sup.-2 and equal to or lower than 4.times.10.sup.15 cm.sup.-2 in the other case. The presence of the thin film prevents the epitaxial growth from starting from the interface between the conductor and the semiconductor region and reduces the crystal defect formation and growth near the interface.
REFERENCES:
patent: 5670805 (1997-09-01), Hammerl et al.
patent: 5869868 (1999-02-01), Rajeevakumar
patent: 5905279 (1999-05-01), Nitayama et al.
patent: 6034390 (2000-03-01), Tews
Sugiura Soichi
Watanobe Hisashi
Kabushiki Kaisha Toshiba
Meier Stephen D.
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