Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-11-22

2009-08-18

Pizarro, Marcos D. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S132000, C438S601000, C257SE21592

Reexamination Certificate

active

07576014

ABSTRACT:
A semiconductor device with a fuse3ato be cut for a circuit modification, of which passivation film coating the uppermost wiring layer is formed in a two-layer structure including a first insulating film11with high filling capability and a second insulating film12blocking penetration of moisture or impurities. An opening21formed in a specific depth through the insulating films on the fuse3ais coated by a third insulating film13with the blocking capability. This prevents the penetration of moisture or impurities, and the corrosion of the fuse3a.

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Japanese Notice of Reasons for Refusal, w/ English translation thereof, issued in Japanese Patent Application No. JP 2004-339424 dated Apr. 22, 2009.

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