Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2009-11-03
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21635
Reexamination Certificate
active
07612413
ABSTRACT:
A semiconductor device includes a substrate, a p-channel MIS transistor formed on the substrate, the p-channel MIS transistor having a first gate electrode, and an n-channel MIS transistor formed on the substrate separately from the p-channel MIS transistor, the n-channel MIS transistor having a second gate electrode. Each of the first gate electrode and the second gate electrode is formed of an alloy of Ta and C in which a mole ratio of C to Ta (C/Ta) is from 2 to 4.
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Ichihara Reika
Kamimuta Yuuichi
Koyama Masato
Nishiyama Akira
Tsuchiya Yoshinori
Gurley Lynne A.
Kabushiki Kaisha Toshiba
Matthews Colleen A
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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