Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-03-31

2008-12-30

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S408000, C257S655000

Reexamination Certificate

active

07470956

ABSTRACT:
A semiconductor device has a semiconductor base, an anode electrode, and a cathode electrode. The semiconductor base includes a P type semiconductor substrate, an insulating film, an N−type semiconductor region formed on the insulating film, an N+type semiconductor region, and a P+type semiconductor region facing the N+type semiconductor region via the N−type semiconductor region. The semiconductor device further has an N type diffusion layer which is formed, in the N−type semiconductor region at the interface between the insulating film and the N−type semiconductor region, so as to have a concentration gradient such that the N type impurity concentration increases from the side of the anode electrode to the side of the cathode electrode.

REFERENCES:
patent: 5098861 (1992-03-01), Blackstone
patent: 06-120458 (1994-04-01), None

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