Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-09-09

2008-10-21

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S781000

Reexamination Certificate

active

07439111

ABSTRACT:
An object of the invention is to form an insulating film having favorable insulation and planarity. An insulating film is formed by performing heat treatment a resin containing a siloxane polymer after application, in an atmosphere including an inert gas as its main component and having an oxygen concentration of 5% or less and a water concentration of 1% or less. Preferably, an oxygen concentration is 1% or less and a water concentration is 0.1% or less. The resin containing a siloxane polymer includes a methyl group and a phenyl group. Further, the inert gas is nitrogen.

REFERENCES:
patent: 3834939 (1974-09-01), Beyer et al.
patent: 4041190 (1977-08-01), Dubois et al.
patent: 5045504 (1991-09-01), Gualandris et al.
patent: 5106787 (1992-04-01), Yen
patent: 5230929 (1993-07-01), Caporiccio et al.
patent: 5270259 (1993-12-01), Ito et al.
patent: 5320983 (1994-06-01), Ouellet
patent: 5334454 (1994-08-01), Caporiccio et al.
patent: 5358739 (1994-10-01), Baney et al.
patent: 5370903 (1994-12-01), Mine et al.
patent: 5370904 (1994-12-01), Mine et al.
patent: 5372842 (1994-12-01), Mine et al.
patent: 5380555 (1995-01-01), Mine et al.
patent: 5512650 (1996-04-01), Leir et al.
patent: 5614251 (1997-03-01), Sakamoto et al.
patent: 5843526 (1998-12-01), Lukacs, III et al.
patent: 5866197 (1999-02-01), Bremmer et al.
patent: 6087024 (2000-07-01), Whinnery et al.
patent: 6288438 (2001-09-01), Mizuhara et al.
patent: 6589889 (2003-07-01), Endisch et al.
patent: 6613834 (2003-09-01), Nakata et al.
patent: 6699799 (2004-03-01), Ahn et al.
patent: 6833560 (2004-12-01), Konuma et al.
patent: 6891237 (2005-05-01), Bao et al.
patent: 6958525 (2005-10-01), Nakata et al.
patent: 7235866 (2007-06-01), Nakata et al.
patent: 2001/0033026 (2001-10-01), Nakata et al.
patent: 2001/0053559 (2001-12-01), Nagao et al.
patent: 2003/0087534 (2003-05-01), Mallikarjunan et al.
patent: 2003/0207131 (2003-11-01), Nakata et al.
patent: 2004/0028915 (2004-02-01), Shibuya et al.
patent: 2004/0082195 (2004-04-01), Yudasaka et al.
patent: 2004/0180223 (2004-09-01), Shibuya et al.
patent: 2004/0180556 (2004-09-01), Chiang et al.
patent: 2005/0095840 (2005-05-01), Bhanap et al.
patent: 2005/0130439 (2005-06-01), Goo et al.
patent: 2005/0139786 (2005-06-01), Tanaka et al.
patent: 2005/0191846 (2005-09-01), Cheung et al.
patent: 2006/0022357 (2006-02-01), Nakata et al.
patent: 2006/0040509 (2006-02-01), Yim et al.
patent: 2006/0134891 (2006-06-01), Ohnuma et al.
patent: 2006/0189163 (2006-08-01), Motoyama et al.
patent: 2007/0054501 (2007-03-01), Carman et al.
patent: 2007/0077781 (2007-04-01), Lee et al.
patent: 2007/0077782 (2007-04-01), Lee et al.
patent: 543665 (1993-05-01), None
patent: 10-242277 (1998-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4010119