Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-04-25

2008-03-18

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S163000, C438S164000, C438S165000, C257SE27131, C257SE27132, C257SE27117, C349S042000, C349S043000, C349S151000

Reexamination Certificate

active

07344930

ABSTRACT:
To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si) layers provided above an insulating substrate and having relatively large grain sizes; a third islands-shaped p-Si layer having relatively small grain sizes; a first gate insulating film provided on the first p-Si layer and having a first thickness; second and third gate insulating films provided on the second and third p-Si layers having second and third thicknesses which are not less than the first thickness; gate electrodes provided on the gate insulating films; n-type high-concentration source/drain regions formed by adding an n-type impurity to a high concentration outside channel regions; and second and third n-type low-concentration-source/drain regions provided between the channel regions and the n-type high-concentration source/drain regions of the second and third p-Si layers. The third n-type low-concentration source/drain regions have a higher impurity dose than the second n-type low-concentration source/drain regions.

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