Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-04-22

2008-04-22

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S763000, C257SE21177

Reexamination Certificate

active

11473693

ABSTRACT:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a gate insulating layer, a gate electrode, an oxide layer, and sidewalls. The gate insulating layer is formed on the substrate. The gate electrode includes an upper layer and a lower layer stacked on the gate insulating layer. The oxide layer is formed on the gate electrode. The lower layer and the upper layer can have different oxidation rates. The sidewalls are formed on the oxide layer.

REFERENCES:
patent: 5652156 (1997-07-01), Liao et al.
patent: 5767004 (1998-06-01), Balasubramanian et al.
patent: 6624483 (2003-09-01), Kurata
patent: 6730976 (2004-05-01), Harada et al.
patent: 6876045 (2005-04-01), Takagi
patent: 2003/0203610 (2003-10-01), Gilton et al.
patent: 2006/0073688 (2006-04-01), Martin et al.

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