Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-06
2007-02-06
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257S331000, C257S329000, C257S384000, C257SE29131, C257SE29257, C257SE29260
Reexamination Certificate
active
10947264
ABSTRACT:
An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.
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Afanasev, V. V., et al., “Intrinsic SiC/SiO2Interface States” Phys. Stat. Sol. (A) 162, 321 (1997), pp. 321-337.
Hayashi Tetsuya
Hoshi Masakatsu
Kaneko Saichirou
Tanaka Hideaki
Mandala Jr. Victor A.
McDermott Will & Emery LLP
Nissan Motor Co,. Ltd.
Pert Evan
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