Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-08-14

2007-08-14

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S618000

Reexamination Certificate

active

11236847

ABSTRACT:
A result of formation of an opening in a semiconductor substrate can be judged without cutting a semiconductor wafer and observing a cross-section of the cut wafer. A semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, an opening formed in the semiconductor substrate to expose the pad electrode, a wiring layer connected with the pad electrode through the opening and a monitoring opening formed in a scribe line to monitor a result of the formation of the opening.

REFERENCES:
patent: 5618752 (1997-04-01), Gaul
patent: 11-204525 (1999-07-01), None
patent: 2003-309221 (2003-10-01), None
patent: 2003-0058309 (2003-07-01), None

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