Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-11-06
2007-11-06
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S678000, C438S597000
Reexamination Certificate
active
11047576
ABSTRACT:
When forming a silicon nitride film to protect and insulate a surface on which a silicon substrate has been ground or polishing, by use of a mixed gas containing SiH4, N2, and NH3as a reaction gas, a film is formed by a single-frequency parallel-plate plasma CVD method. Thereby, even when the film forming temperature is made not more than an allowable temperature limit of an adhesive to adhere a support (for example, approximately 100° C. or less, which is an allowable temperature limit when the adhesive is an ultraviolet curing resin), a high-quality film without exfoliation in a CMP step of the following step and with less leakage can be formed. This high-quality film is, if being prescribed by a refractive index, a film whose refractive index with respect to a wavelength of 633 nm is approximately 1.8 through 1.9.
REFERENCES:
patent: 6130119 (2000-10-01), Jinnai
patent: 6818546 (2004-11-01), Saito et al.
patent: 10-223833 (1998-08-01), None
Dang Phuc T.
McGinn IP Law Group PLLC
NEC Electronics Corporation
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